Description

Silicon Wafer Polished Size 2″ ( =50.8mm )

Diameter : 50.8mm±0.2mm
Growth Method : Czochralski (CZ)
BOW : ≤30µm
WARP : ≤30µm
Total Thickness Variation (TTV) : ≤5µm
Particles : ≤10@≥0.3µm
Oxygen Concentration : ≤18 ppma
Carbon Concentration : ≤1 ppma
Surface Roughness Ra : ≤5

Grade : prime
Type : P Type/N Type
Dpant : Boron(B)/Phosphorus(Ph)
Orientation : (1-0-0)
Resistivity (Ohm-Cm) : ≤0.005/1-5/1-10/10-20
Thickness : 279±25µm
Finish : Single Side Polished (SSP)/Double Side Polished (DSP)
Flats : 1 SEMI Flat